Given, 𝑉𝑔𝑠 is the gate-source voltage, 𝑉𝑑𝑠 is the drain source voltage, and 𝑉𝑡ℎ is the threshold voltage of an enhancement type NMOS transistor

Q. Given, 𝑉_𝑔𝑠 is the gate-source voltage, 𝑉_𝑑𝑠 is the drain source voltage, and 𝑉_𝑡ℎ is the threshold voltage of an enhancement type NMOS transistor, the conditions for transistor to be biased in saturation are

(A) 𝑉_𝑔𝑠 < 𝑉_𝑡ℎ ; 𝑉_𝑑𝑠 ≥ 𝑉_𝑔𝑠 − 𝑉_𝑡ℎ

(B) 𝑉_𝑔𝑠 > 𝑉_𝑡ℎ ; 𝑉_𝑑𝑠 ≥ 𝑉_𝑔𝑠 − 𝑉_𝑡ℎ

(C) 𝑉_𝑔𝑠 > 𝑉_𝑡ℎ ; 𝑉_𝑑𝑠 ≤ 𝑉_𝑔𝑠 − 𝑉_𝑡ℎ

(D) 𝑉_𝑔𝑠 < 𝑉_𝑡ℎ ; 𝑉_𝑑𝑠 ≤ 𝑉_𝑔𝑠 − 𝑉_𝑡ℎ

Ans: Vgs > Vth; Vds ≥ Vgs – Vth