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Free download in PDF Class 12 Physics Chapter 14 Semiconductor Electronics Multiple Choice Questions and Answers for Board, JEE, NEET, AIIMS, JIPMER, IIT-JEE, AIEE and other competitive exams. MCQ Questions for Class 12 Physics with Answers were prepared based on the latest exam pattern. These short solved questions or quizzes are provided by Gkseries. These will help the students for preparation of their examination./p>
(1)
In semi conductor which are responsible for conduction:
[A]
only electron
[B]
electron and hole both
[C]
only hole
[D]
None of these
Answer: electron and hole both
(2)
In the middle of the depletion layer of a reverse biased p-n junction, the:
[A]
electric field is zero
[B]
potential is maximum
[C]
electric field is maximum
[D]
potential zero.
(3)
p-n junction diode can be used as:
[A]
amplifier
[B]
oscillator
[C]
detector
[D]
modulator
(4)
For germanium crystal, the forbidden energy gap in joules
[A]
1.216 × 10-19
[B]
1.76 × 10-19
[C]
1.6 × 10-19
[D]
zero
(5)
In reverse biasing:
[A]
large amount of current flows
[B]
no current flows
[C]
potential barrier across junction increases
[D]
depletion layer resistance increases
Answer: potential barrier across junction increases
(6)
With fall of temperature, the forbidden energy gap of a semiconductor
[A]
increases
[B]
decreases
[C]
sometimes increases and sometimes decreases
[D]
remains unchanged
Answer: remains unchanged
(7)
Main function of a transistor is to :
[A]
rectify
[B]
simplify
[C]
amplify
[D]
all the above
(8)
In a common base amplifier the phase difference between the input signal voltage and output voltage is :
[A]
π/2
[B]
0
[C]
π/4
[D]
π
(9)
On heating, resistance of semiconductors:
[A]
decreases
[B]
increases
[C]
remains same
[D]
first increases then decreases
(10)
On applying reverse bias to a junction diode, it:
[A]
lowers the potential barrier
[B]
raise the potential barrier
[C]
increases the majority carrier current
[D]
increases the minority carrier current
Answer: raise the potential barrier
(11)
In a p-type semiconductor, current conduction is by:
[A]
atoms
[B]
holes
[C]
electrons
[D]
protons
(12)
Energy bands in solids are a consequence of:
[A]
Ohm’s Law
[B]
Pauli’s exclusion principle
[C]
Bohr’s theory
[D]
Heisenberg’s uncertainty principle
Answer: Pauli’s exclusion principle
(13)
To obtain p-type silicon semiconductor, we need to dope pure silicon with:
[A]
aluminium
[B]
phosphorus
[C]
oxygen
[D]
germanium
(14)
The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by:
[A]
n ∝ T
[B]
n ∝ T²
[C]
n ∝ T1/2
[D]
n ∝ T3/2
(15)
Number of electrons in the valence shell of a semiconductor is:
(16)
The material most commonly used to manufacture electronic solid state devices is :
[A]
copper
[B]
silicon
[C]
germanium
[D]
aluminium
(17)
Crystal diode is:
[A]
amplifying device
[B]
fluctuating device
[C]
non-linear device
[D]
linear device
Answer: non-linear device
(18)
Winch of the following gate is not an universal gate?
[A]
OR
[B]
NOT
[C]
AND
[D]
NAND
(19)
In intrinsic semiconductor at room temperature, the number of electrons and holes are:
[A]
equal
[B]
unequal
[C]
infinite
[D]
zero
(20)
In binary system III represents:
[A]
1
[B]
3
[C]
7
[D]
100
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