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Free download in PDF Semiconductor Diode Multiple Choice Questions and Answers for competitive exams. These short objective type questions with answers are very important for Board exams as well as competitive exams like IIT-JEE, AIIMS etc. These short solved questions or quizzes are provided by Gkseries.
(1)
A crystal diode has ………
[A]
one pn junction
[B]
two pn junctions
[C]
three pn junctions
[D]
none of the above
(2)
A crystal diode has forward resistance of the order of ……………
[A]
kΩ
[B]
Ω
[C]
MΩ
[D]
none of the above
(3)
A crystal diode is used as ……………
[A]
an amplifier
[B]
a rectifier
[C]
an oscillator
[D]
a voltage regulator
(4)
An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
[A]
conductor
[B]
insulator
[C]
resistance material
[D]
None of the above
(5)
The ratio of reverse resistance and forward resistance of a germanium crystal diode is about ………….
[A]
1 : 1
[B]
100 : 1
[C]
1000 : 1
[D]
40,000 : 1
(6)
The leakage current in a crystal diode is due to …………….
[A]
Minority Carriers
[B]
Majority Carriers
[C]
Junction Capacitance
[D]
None Of The Above
Answer: Minority Carriers
(7)
The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode
[A]
The Same As
[B]
Lower Than
[C]
More Than
[D]
None Of The Above
(8)
The knee voltage of a crystal diode is approximately equal to ………….
[A]
Applied Voltage
[B]
Breakdown Voltage
[C]
Forward Voltage
[D]
Barrier Potential
Answer: Barrier Potential
(9)
A crystal diode is a …………… device
[A]
Non-Linear
[B]
Bilateral
[C]
Linear
[D]
None Of The Above
(10)
A crystal diode utilises …………….. characteristic for rectification
[A]
Reverse
[B]
Forward
[C]
Forward Or Reverse
[D]
None Of The Above
(11)
Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3, as such the p-n junction so formed would be termed as a
[A]
p– n–
[B]
p+ n–
[C]
p– n+
[D]
p+ n+
(12)
In the p & n regions of the p-n junction the _________ & the ___________ are the minority charge carriers respectively.
[A]
holes, holes
[B]
electrons, electrons
[C]
holes, electrons
[D]
electrons, holes
(13)
Which of the below mentioned statements is false regarding a p-n junction diode?
[A]
Diode are uncontrolled devices
[B]
Diodes are rectifying devices
[C]
Diodes are unidirectional devices
[D]
Diodes have three terminals
Answer: Diodes have three terminals
(14)
The maximum efficiency of a half-wave rectifier is ………………..
[A]
40.6 %
[B]
81.2 %
[C]
50 %
[D]
25 %
(15)
The most widely used rectifier is ……………….
[A]
half-wave rectifier
[B]
centre-tap full-wave rectifier
[C]
bridge full-wave rectifier
[D]
none of the above
Answer: bridge full-wave rectifier
(16)
The p-region has a greater concentration of __________ as compared to the n-region in a P-N junction.
[A]
holes
[B]
electrons
[C]
both holes & electrons
[D]
phonons
(17)
The n-region has a greater concentration of _________ as compared to the p-region in a P-N junction diode.
[A]
holes
[B]
electrons
[C]
both holes & electrons
[D]
phonons
(18)
A p-type semiconductor material is doped with ____________ impurities whereas a n-type semiconductor material is doped with __________ impurities
[A]
acceptor, donor
[B]
acceptor, acceptor
[C]
donor, donor
[D]
donor, acceptor
(19)
In the breakdown region, a zener didoe behaves like a …………… source.
[A]
constant voltage
[B]
constant current
[C]
constant resistance
[D]
none of the above
(20)
A zener diode is …………………. device
[A]
A Non-Linear
[B]
A Linear
[C]
An Amplifying
[D]
None Of The Above
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