The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with Φms = 0 V and no oxide charges.

Q. The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with Φms = 0 V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points

(A) P, Q, R

(B) Q, R, P

(C) R, P, Q

(D) Q, P, R

Ans: Q, R, P

Solution:

1) Flat band voltage is the voltage where there is a no-charge present in the oxide or oxide semiconductor interface. 2) As the gate voltage Va increase, more electrons are attracted to the oxide-semiconductor interface. A-n type channel is formed. The inversion takes place at R 3) For negative gate voltage, more holes are accumulated near the gate. Accumulations take place at P.