gate questions

A resistance-meter has five measurement range-settings between 200 ฮฉ and 2 Mฮฉ in multiples of 10. The meter measures resistance

A resistance-meter has five measurement range-settings between 200 ฮฉ and 2 Mฮฉ in multiples of 10. The meter measures resistance

Q. A resistance-meter has five measurement range-settings between 200 ฮฉ and 2 Mฮฉ in multiples of 10. The meter measures resistance of a device by measuring a full-range voltage of 2 V across the device by passing an appropriate constant current for each range-setting. If a device having a resistance value in the range 8 […]

A resistance-meter has five measurement range-settings between 200 ฮฉ and 2 Mฮฉ in multiples of 10. The meter measures resistance Read More ยป

A 100 W light source emits uniformly in all directions. A photodetector having a circular active area whose diameter is 2 cm is placed 1 m away from the source

A 100 W light source emits uniformly in all directions. A photodetector having a circular active area whose diameter is 2 cm is placed 1 m away from the source

Q. A 100 W light source emits uniformly in all directions. A photodetector having a circular active area whose diameter is 2 cm is placed 1 m away from the source, normal to the incident light. If the responsivity of the photodetector is 0.4 A/W, the photo-current generated in the detector, in units of mA,

A 100 W light source emits uniformly in all directions. A photodetector having a circular active area whose diameter is 2 cm is placed 1 m away from the source Read More ยป

A piezoelectric transducer with sensitivity of 30 mV/kPa is intended to be used in the range of 0 kPa to 100 kPa. The readout

Q. A piezoelectric transducer with sensitivity of 30 mV/kPa is intended to be used in the range of 0 kPa to 100 kPa. The readout circuit has a peak noise amplitude of 0.3 mV and measured signals over the full pressure range are encoded with 10 bits. The smallest pressure that produces a non-zero output,

A piezoelectric transducer with sensitivity of 30 mV/kPa is intended to be used in the range of 0 kPa to 100 kPa. The readout Read More ยป

In the circuit below, the light dependent resistor (LDR) receives light from the LED. The LDR has resistances of 5 k W and 500 W under dark and illuminated conditions

In the circuit below, the light dependent resistor (LDR) receives light from the LED. The LDR has resistances of 5 k W and 500 W under dark and illuminated conditions

Q. In the circuit below, the light dependent resistor (LDR) receives light from the LED. The LDR has resistances of 5 k W and 500 W under dark and illuminated conditions, respectively. The LED is OFF at time ๐‘ก < 0. At time t =ย 0 s, the switch S1 is closed for 1 ms and

In the circuit below, the light dependent resistor (LDR) receives light from the LED. The LDR has resistances of 5 k W and 500 W under dark and illuminated conditions Read More ยป

In the circuit shown below, assume that the comparators are ideal and all components have zero propagation delay. In one period of the input signal ๐‘‰๐‘–๐‘› = 6 sin(๐œ”๐‘ก)

In the circuit shown below, assume that the comparators are ideal and all components have zero propagation delay. In one period of the input signal ๐‘‰๐‘–๐‘› = 6 sin(๐œ”๐‘ก)

Q. In the circuit shown below, assume that the comparators are ideal and all components have zero propagation delay. In one period of the input signal ๐‘‰๐‘–๐‘› = 6 sin(๐œ”๐‘ก), the fraction of the time for which the output OUT is in logic state HIGH is Sol: The output represents X-NOR gate. So, the given

In the circuit shown below, assume that the comparators are ideal and all components have zero propagation delay. In one period of the input signal ๐‘‰๐‘–๐‘› = 6 sin(๐œ”๐‘ก) Read More ยป

voltage amplifier is constructed using enhancement mode MOSFETs labeled M1, M2, M3 and M4 in the figure below. M1, M2 and M4 are n-channel MOSFETs

voltage amplifier is constructed using enhancement mode MOSFETs labeled M1, M2, M3 and M4 in the figure below. M1, M2 and M4 are n-channel MOSFETs

Q. A voltage amplifier is constructed using enhancement mode MOSFETs labeled M1, M2, M3 and M4 in the figure below. M1, M2 and M4 are n-channel MOSFETs and M3 is a p-channel MOSFET. All MOSFETs operate in saturation mode and channel length modulation can be ignored. The low frequency, small signal input and output voltages

voltage amplifier is constructed using enhancement mode MOSFETs labeled M1, M2, M3 and M4 in the figure below. M1, M2 and M4 are n-channel MOSFETs Read More ยป

The forward path transfer function L(s) of the control system shown in Figure (a) has the asymptotic Bode plot shown

The forward path transfer function L(s) of the control system shown in Figure (a) has the asymptotic Bode plot shown

Q. The forward path transfer function L(s) of the control system shown in Figure (a) has the asymptotic Bode plot shown in Figure (b). If the disturbance d (t) is given by d(t) = 0.1sin(wt) where w = 5 rad s , the steady-state amplitude of the output y(t) is Sol: as r = 0

The forward path transfer function L(s) of the control system shown in Figure (a) has the asymptotic Bode plot shown Read More ยป

A complex function ๐‘“(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) + ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) and its complex conjugate ๐‘“โˆ—(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) โˆ’ ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) are both analytic in the entire complex plane

A complex function ๐‘“(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) + ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) and its complex conjugate ๐‘“โˆ—(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) โˆ’ ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) are both analytic in the entire complex plane

Q. A complex function ๐‘“(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) + ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) and its complex conjugate ๐‘“โˆ—(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) โˆ’ ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) are both analytic in the entire complex plane, where ๐‘ง = ๐‘ฅ + ๐‘– ๐‘ฆ and ๐‘– = โˆšโˆ’1 . The function ๐‘“ is then given by Sol: f(z) = u(x,

A complex function ๐‘“(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) + ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) and its complex conjugate ๐‘“โˆ—(๐‘ง) = ๐‘ข(๐‘ฅ, ๐‘ฆ) โˆ’ ๐‘– ๐‘ฃ(๐‘ฅ, ๐‘ฆ) are both analytic in the entire complex plane Read More ยป

The function ๐‘(๐‘ฅ) is given by ๐‘(๐‘ฅ) = ๐ด/๐‘ฅ๐œ‡ where ๐ด and ๐œ‡ are constants with ๐œ‡ > 1 and 1 โ‰ค ๐‘ฅ < โˆž and ๐‘(๐‘ฅ) = 0 for โˆ’โˆž < ๐‘ฅ < 1

The function ๐‘(๐‘ฅ) is given by ๐‘(๐‘ฅ) = ๐ด/๐‘ฅ๐œ‡ where ๐ด and ๐œ‡ are constants with ๐œ‡ > 1 and 1 โ‰ค ๐‘ฅ < โˆž and ๐‘(๐‘ฅ) = 0 for โˆ’โˆž < ๐‘ฅ < 1

Q. The function ๐‘(๐‘ฅ) is given by ๐‘(๐‘ฅ) = ๐ด/๐‘ฅ๐œ‡ where ๐ด and ๐œ‡ are constants with ๐œ‡ > 1 and 1 โ‰ค ๐‘ฅ < โˆž and ๐‘(๐‘ฅ) = 0 for โˆ’โˆž < ๐‘ฅ < 1. For ๐‘(๐‘ฅ) to be a probability density function, the value of ๐ด should be equal to Sol:

The function ๐‘(๐‘ฅ) is given by ๐‘(๐‘ฅ) = ๐ด/๐‘ฅ๐œ‡ where ๐ด and ๐œ‡ are constants with ๐œ‡ > 1 and 1 โ‰ค ๐‘ฅ < โˆž and ๐‘(๐‘ฅ) = 0 for โˆ’โˆž < ๐‘ฅ < 1 Read More ยป

The curve y = f (x) is such that the tangent to the curve at every point (๐‘ฅ, ๐‘ฆ) has a ๐‘Œ-axis intercept ๐‘, given by ๐‘ = โˆ’๐‘ฆ. Then, f (x) is proportional to

The curve y = f (x) is such that the tangent to the curve at every point (๐‘ฅ, ๐‘ฆ) has a ๐‘Œ-axis intercept ๐‘, given by ๐‘ = โˆ’๐‘ฆ. Then, f (x) is proportional to

Q. The curve y = f (x) is such that the tangent to the curve at every point (๐‘ฅ, ๐‘ฆ) has a ๐‘Œ-axis intercept ๐‘, given by ๐‘ = โˆ’๐‘ฆ. Then, f (x) is proportional to (A) x–1 (B) x2 (C) x3 (D) x4 Ans: x2 Sol: Let the equation of tangent is, y =

The curve y = f (x) is such that the tangent to the curve at every point (๐‘ฅ, ๐‘ฆ) has a ๐‘Œ-axis intercept ๐‘, given by ๐‘ = โˆ’๐‘ฆ. Then, f (x) is proportional to Read More ยป